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  technical data npn power transistor silicon amplifier qualified per mil - prf - 19500/583 devices qualified level 2N5681 2n5682 jan jantx jantxv maximum ratings (t a = 25 c unless otherwise noted) ratings symbol 2N5681 2n5682 units collector - e mitter voltage v ceo 100 120 vdc collector - base voltage v cbo 100 120 vdc emitter - base voltage v ebo 4.0 4.0 vdc collector current i c 1.0 1.0 adc base current i b 0.5 0.5 adc total power dissipation @ t a = +25 0 c (1) @ t c = +25 0 c (2) p t 1.0 10 1.0 10 w w operating & storage temperature range t op , t stg - 65 to +200 - 65 to +200 c thermal characteristics characteristics symbol max. unit thermal resistance, junction - to - case r q jc 17.5 0 c 1) derate linearly 5.7 mw / 0 c for t a > +25 0 c 2) derate linearly 57 mw/ 0 c for t c > +25 0 c *see appendix a for package outline electrical characteristics (t a = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown v oltage i c = 10 madc 2N5681 2n5682 v( br ) ceo 100 120 vdc emitter - base cutoff current v eb = 4.0 vdc i ebo 1.0 m adc collector - emitter cutoff current v ce = 70 vdc 2N5681 v ce = 80 vdc 2n5682 i ceo 10 m adc collector - emitter cutoff current v be = 1.5 vdc v ce = 100 vdc 2N5681 v ce = 120 vdc 2n5682 i cex 100 na dc collector - baser cutoff current v ce = 100 vdc 2N5681 v ce = 120 vdc 2n5682 i cbo 100 nadc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2 to - 39* (to - 20 5ad)
2N5681, 2n5682 jan series electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics (3) forward current transfer ratio i c = 250 madc, v ce = 2.0 vdc i c = 500 madc , v ce = 2.0 vdc i c = 1.0 adc, v ce = 2.0 vdc h fe 40 20 5 150 collector - emitter saturation voltage i c = 250 madc, i b = 25 madc i c = 500 madc, i b = 50 madc v ce(sat) 0.6 1.0 vdc base - emitter saturation voltage i c = 250 madc, i b = 25 mad c i c = 500 madc, i b = 50 madc v be(sat) 1.1 1.3 vdc dynamic characteristics magnitude of common emitter small - signal short circuit forward - current transfer ratio i c = 0.1 adc, v ce = 10 vdc, f = 10 khz ? h fe ? 3.0 small signal short circuit fo rward - current transfer ratio i c = 0.2 adc, v ce = 1.5 vdc, f = 1.0 khz h fe 40 output capacitance v cb = 20 vdc, i e = 0, f = 1 mhz c obo 50 pf safe operating area dc tests t c = +25 0 c, 1 cycle, t 3 0.5 s test 1 v ce = 2 vdc, i c = 1.0 adc test 2 v ce = 10 vdc, i c = 1.0 adc test 3 v ce = 90 vdc, i c = 50 madc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2


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